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Energy band diagram of device-grade silicon nanocrystals

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M Macias-Montero, S Askari, S Mitra, C Rocks, Chengsheng Ni, V Svrcek, Paul Alexander Connor, P Maguire, John Thomas Sirr Irvine, D Mariotti

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Abstract

Device grade silicon nanocrystals (NCs) are synthesized using an atmospheric-pressure plasma technique. The Si NCs have a small and well defined size of about 2.3 nm. The synthesis system allows for the direct creation of thin films, enabling a range of measurements to be performed and easy implementation of this material in different devices. The chemical stability of the Si NCs is evaluated, showing relatively long-term durability thanks to hydrogen surface terminations. Optical and electrical characterization techniques, including Kelvin probe, ultraviolet photoemission spectroscopy and Mott-Schottky analysis, are employed to determine the energy band diagram of the Si NCs.

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Original languageEnglish
Pages (from-to)6623-8
Number of pages6
JournalNanoscale
Volume8
Issue number12
DOIs
Publication statusPublished - 17 Mar 2016

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