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Observation of relaxor-ferroelectric behavior in gallium ferrite thin films

Research output: Contribution to journalArticlepeer-review

Author(s)

Sita Dugu, Mohan K. Bhattarai, Shalini Kumari, Alvaro A. Instan, Dhiren K. Pradhan, Mikel Holcomb, James F. Scott, Ram S. Katiyar

School/Research organisations

Abstract

We report a detailed investigation on magnetic and electrical properties of the multiferroic GaFeO3 (GFO) thin films grown on SrRuO3 (SRO) buffered SrTiO3 (1 1 1) substrates. The magnetic transition temperature (Tc) of GFO thin films is observed ∼240 K, which is higher by 20 K than in GFO ceramic. The clear and reversible out-of-plane phase-contrast seen in the Piezoresponse Force Microscopy (PFM) phase and amplitude images measured within positive and negative poling confirms the polarization reorientation and hence piezoelectric nature of the compound. The temperature and frequency dependence of permittivity studies demonstrates the relaxor behavior of these thin films. The observed near room temperature (RT) magnetic phase transition with RT piezoelectric nature of these thin films elucidates the possible potential candidates for a multiferroic world with spintronics device applications.

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Details

Original languageEnglish
Article number146459
JournalApplied Surface Science
Volume523
Early online date29 Apr 2020
DOIs
Publication statusPublished - 1 Sep 2020

    Research areas

  • Gallium ferrite, Multiferroic, Relaxor, Thin-film

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