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Quantum oscillations and high carrier mobility in the delafossite PdCoO2

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Clifford William Hicks, Alexandra Sarah Gibbs, Andrew Mackenzie, Hiroshi Takatsu, Yoshiteru Maeno, Edward Alexander Yelland

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Abstract

We present de Haas-van Alphen and resistivity data on single crystals of the delafossite PdCoO2. At 295 K we measure an in-plane resistivity of 2.6 μΩcm, making PdCoO2 the most conductive oxide known. The low-temperature in-plane resistivity has an activated rather than the usual T5 temperature dependence, suggesting a gapping of effective scattering that is consistent with phonon drag. Below 10 K, the transport mean free path is ∼20 μm, approximately 105 lattice spacings and an astoundingly high value for flux-grown crystals. We discuss the origin of these properties in light of our data.

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Original languageEnglish
Article number116401
Number of pages5
JournalPhysical Review Letters
Volume109
Issue number11
Early online date23 Jul 2012
DOIs
Publication statusPublished - Sep 2012
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