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Quantum oscillations and high carrier mobility in the delafossite PdCoO2

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Quantum oscillations and high carrier mobility in the delafossite PdCoO2. / Hicks, Clifford William; Gibbs, Alexandra Sarah; Mackenzie, Andrew; Takatsu, Hiroshi; Maeno, Yoshiteru; Yelland, Edward Alexander.

In: Physical Review Letters, Vol. 109, No. 11, 116401, 09.2012.

Research output: Contribution to journal › Article › peer-review

Harvard

Hicks, CW, Gibbs, AS, Mackenzie, A, Takatsu, H, Maeno, Y & Yelland, EA 2012, 'Quantum oscillations and high carrier mobility in the delafossite PdCoO2', Physical Review Letters, vol. 109, no. 11, 116401. https://doi.org/10.1103/PhysRevLett.109.116401

APA

Hicks, C. W., Gibbs, A. S., Mackenzie, A., Takatsu, H., Maeno, Y., & Yelland, E. A. (2012). Quantum oscillations and high carrier mobility in the delafossite PdCoO2. Physical Review Letters, 109(11), [116401]. https://doi.org/10.1103/PhysRevLett.109.116401

Vancouver

Hicks CW, Gibbs AS, Mackenzie A, Takatsu H, Maeno Y, Yelland EA. Quantum oscillations and high carrier mobility in the delafossite PdCoO2. Physical Review Letters. 2012 Sep;109(11). 116401. https://doi.org/10.1103/PhysRevLett.109.116401

Author

Hicks, Clifford William ; Gibbs, Alexandra Sarah ; Mackenzie, Andrew ; Takatsu, Hiroshi ; Maeno, Yoshiteru ; Yelland, Edward Alexander. / Quantum oscillations and high carrier mobility in the delafossite PdCoO2. In: Physical Review Letters. 2012 ; Vol. 109, No. 11.

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@article{732426dfd461475bb6f6b7e6927325a6,
title = "Quantum oscillations and high carrier mobility in the delafossite PdCoO2",
abstract = "We present de Haas-van Alphen and resistivity data on single crystals of the delafossite PdCoO2. At 295 K we measure an in-plane resistivity of 2.6 μΩcm, making PdCoO2 the most conductive oxide known. The low-temperature in-plane resistivity has an activated rather than the usual T5 temperature dependence, suggesting a gapping of effective scattering that is consistent with phonon drag. Below 10 K, the transport mean free path is ∼20 μm, approximately 105 lattice spacings and an astoundingly high value for flux-grown crystals. We discuss the origin of these properties in light of our data.",
author = "Hicks, {Clifford William} and Gibbs, {Alexandra Sarah} and Andrew Mackenzie and Hiroshi Takatsu and Yoshiteru Maeno and Yelland, {Edward Alexander}",
year = "2012",
month = sep,
doi = "10.1103/PhysRevLett.109.116401",
language = "English",
volume = "109",
journal = "Physical Review Letters",
issn = "0031-9007",
publisher = "American Physical Society",
number = "11",

}

RIS (suitable for import to EndNote) - Download

TY - JOUR

T1 - Quantum oscillations and high carrier mobility in the delafossite PdCoO2

AU - Hicks, Clifford William

AU - Gibbs, Alexandra Sarah

AU - Mackenzie, Andrew

AU - Takatsu, Hiroshi

AU - Maeno, Yoshiteru

AU - Yelland, Edward Alexander

PY - 2012/9

Y1 - 2012/9

N2 - We present de Haas-van Alphen and resistivity data on single crystals of the delafossite PdCoO2. At 295 K we measure an in-plane resistivity of 2.6 μΩcm, making PdCoO2 the most conductive oxide known. The low-temperature in-plane resistivity has an activated rather than the usual T5 temperature dependence, suggesting a gapping of effective scattering that is consistent with phonon drag. Below 10 K, the transport mean free path is ∼20 μm, approximately 105 lattice spacings and an astoundingly high value for flux-grown crystals. We discuss the origin of these properties in light of our data.

AB - We present de Haas-van Alphen and resistivity data on single crystals of the delafossite PdCoO2. At 295 K we measure an in-plane resistivity of 2.6 μΩcm, making PdCoO2 the most conductive oxide known. The low-temperature in-plane resistivity has an activated rather than the usual T5 temperature dependence, suggesting a gapping of effective scattering that is consistent with phonon drag. Below 10 K, the transport mean free path is ∼20 μm, approximately 105 lattice spacings and an astoundingly high value for flux-grown crystals. We discuss the origin of these properties in light of our data.

UR - http://arxiv.org/abs/1207.5402

U2 - 10.1103/PhysRevLett.109.116401

DO - 10.1103/PhysRevLett.109.116401

M3 - Article

VL - 109

JO - Physical Review Letters

JF - Physical Review Letters

SN - 0031-9007

IS - 11

M1 - 116401

ER -

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